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inasgasb超晶格中波红外二极管的阳极硫化
郭杰1; 郝瑞亭2; 段剑金2; 许林2; 李银柱1
2014
Source Publication光子学报
ISSN1004-4213
Volume43Issue:1Pages:64
Abstract采用分子束外延技术,在GaSb衬底上生长了pin结构的InAs(8ML)/GaSb(8ML)超晶格中波红外光电二极管.用阳极硫化和ZnS薄膜对二极管表面进行钝化处理后,二极管漏电流密度降低了三个数量级,零偏阻抗R0达到106Ω,R0A达到103Ωcm2.通过测量电流密度与光敏元周长面积比的关系可知表面漏电不是主要漏电成分;电容电压特性曲线表明吸收层i层背景掺杂浓度约4~5×1014cm-3.在空气中放置一个月后再次测试,发现响应率和探测率几乎没有变化.与化学硫化和SiO2薄膜钝化方法相比,阳极硫化方法是一种更简单和有效的钝化方法.
Language英语
Document Type期刊论文
Identifierhttp://ir.bao.ac.cn/handle/114a11/52104
Collection中国科学院国家天文台
Affiliation1.中国科学院国家天文台
2.云南师范大学
First Author AffilicationNational Astronomical Observatories, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
郭杰,郝瑞亭,段剑金,等. inasgasb超晶格中波红外二极管的阳极硫化[J]. 光子学报,2014,43(1):64.
APA 郭杰,郝瑞亭,段剑金,许林,&李银柱.(2014).inasgasb超晶格中波红外二极管的阳极硫化.光子学报,43(1),64.
MLA 郭杰,et al."inasgasb超晶格中波红外二极管的阳极硫化".光子学报 43.1(2014):64.
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