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2mingaassbalgaassb双波导半导体激光器的结构设计
安宁; 韩兴伟; 刘承志; 范存波; 董雪; 宋清丽
2016
Source Publication光子学报
ISSN1004-4213
Volume45Issue:9Pages:0914001
Abstract为了提高2 μm InGaAsSb/AlGaAsSb 半导体激光器的最大输出功率,减小远场垂直发散角并实现单模稳定输出,在非对称波导结构的基础上设计了具有双波导结构的2 μm InGaAsSb/AlGaAsSb半导体激光器.同时,利用相关的物理模型及SimLastip程序语言构建了InGaAsSb/AlGaAsSb Macro文件,利用SimLastip软件对具有不同结构的2 μm InGaAsSb/AlGaAsSb 半导体激光器进行了数值模拟分析.研究结果表明,双波导结构可以将半导体激光器的有源区限制因子由0.019 2减小至0.011 3,器件的最大输出功率提高了1.7倍,远场垂直发散角由57°减小到48°,器件性能得到了改善.
Language英语
Document Type期刊论文
Identifierhttp://ir.bao.ac.cn/handle/114a11/50581
Collection中国科学院国家天文台
Affiliation中国科学院国家天文台
First Author AffilicationNational Astronomical Observatories, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
安宁,韩兴伟,刘承志,等. 2mingaassbalgaassb双波导半导体激光器的结构设计[J]. 光子学报,2016,45(9):0914001.
APA 安宁,韩兴伟,刘承志,范存波,董雪,&宋清丽.(2016).2mingaassbalgaassb双波导半导体激光器的结构设计.光子学报,45(9),0914001.
MLA 安宁,et al."2mingaassbalgaassb双波导半导体激光器的结构设计".光子学报 45.9(2016):0914001.
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