NAOC Open IR
CCD的近红外敏化技术
曹文达; 季凯帆; 宋谦
1999
Source Publication云南天文台台刊
ISSN1001-7526
Volume000Issue:004Pages:60
Abstract理论上硅CCD在0.1nm到1.1μm之间都有响应,但通常此种器件在800nm以后量子效率下降明显,一般会小于50%,其中最主要的原因是近红外光子的吸收深度大于CCD的外延层厚度,使大量光子穿透整个器件。显然增加外延层的厚度是解决这一问题的良好途径,但随着外延层的增加,必须使用高阻抗的材料,否则会明显的减低分辨率,另外增透膜的使用也会使量子效率大幅度提高,而且有效的减弱了干涉条纹的影响,新型P沟道
Language英语
Document Type期刊论文
Identifierhttp://ir.bao.ac.cn/handle/114a11/47851
Collection中国科学院国家天文台
Affiliation中国科学院国家天文台
First Author AffilicationNational Astronomical Observatories, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
曹文达,季凯帆,宋谦. CCD的近红外敏化技术[J]. 云南天文台台刊,1999,000(004):60.
APA 曹文达,季凯帆,&宋谦.(1999).CCD的近红外敏化技术.云南天文台台刊,000(004),60.
MLA 曹文达,et al."CCD的近红外敏化技术".云南天文台台刊 000.004(1999):60.
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